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PhD em Física

Publicações Acadêmicas

  1. Lima, Erika N. ; Schmidt, Tome M ; Nunes, R. W. Structural and topological phase transitions induced by strain in two-dimensional bismuth. Journal of Physics-Condensed Matter v. 31, p. 475001, 2019.

  2. Bassanezi, Daniely ; Wrasse, Ernesto Osvaldo ; Schmidt, Tome M. Symmetry-dependent topological phase transitions in PbTe layers. Materials Research Express v. 5, p. 015051, 2018.

  3. Araújo, Augusto L. ; Ferreira, Gerson J. ; Schmidt, Tome M. Suppressed topological phase transitions due to nonsymmorphism in SnTe stacking. Scientific Reports v. 8, p. 9452, 2018.

  4. Costa, Marcio ; Costa, Antonio T. ; Freitas, Walter A. ; Schmidt, Tome M. ; Buongiorno Nardelli, Marco ; Fazzio, A. Controlling Topological States in Topological/Normal Insulator Heterostructures. ACS Omega v. 3, p. 15900-15906, 2018.

  5. Padilha, J. E. ; Pontes, R. B. ; Schmidt, Tome M. ; Miwa, R. H. ; Fazzio, A. . A new class of large band gap quantum spin hall insulators: 2D fluorinated group-IV binary compounds. Scientific Reports v. 6, p. 26123, 2016.

  6. Lima, Erika K.; Schmidt, Tome M. ; Nunes, Ricardo W. . Topologically Protected Metallic States Induced by a One-Dimensional Extended Defect in the Bulk of a 2D Topological Insulator. Nano Letters (Print) v. 16, p. 4025-4031, 2016.

  7. Araújo, Augusto L. ; Wrasse, Ernesto O.; Schmidt, Tome M. ; Ferreira, Gerson J. ; . Topological nonsymmorphic ribbons out of symmorphic bulk. PHYSICAL REVIEW B v. 93, p. R161101, 2016.

  8. Freitas, Walter A. ; Fazzio, A; Schmidt, Tome M.  Topological states of nanoscale Bi2Se3 interfaced with AlN. Applied Physics Letters v. 109, p. 131601, 2016.

  9. Lima, Erika N. ; Schmidt, Tome M. . Topological phase driven by confinement effects in Bi bilayers. Physical Review. B, Condensed Matter and Materials Physicsv. 91, p. 075432, 2015.

  10. Scopel, W. L. ; Miwa, R. H. ; Schmidt, T. M. ; Venezuela, P. . MoS2 on an amorphous HfO2 surface: An ab initio investigation. Journal of Applied Physics v. 117, p. 194303, 2015.

  11. Abdalla, L B ; Padilha Jose, E ; Schmidt, T. M. ; Miwa, R H ; Fazzio, A . Topological phase transitions of (Bi x Sb 1− x ) 2 Se 3 alloys by density functional theory. Journal of Physics. Condensed Matter v. 27, p. 255501, 2015.

  12. Wrasse, Ernesto O. ; Torres, Alberto ; Baierle, Rogerio J. ; Fazzio', Adalberto ; Schmidt, Tome M. Size- effect induced high thermoelectric figure of merit in PbSe and PbTe nanowires. PCCP. Physical Chemistry Chemical Physics v. 16, p. 8114, 2014.

  13. Wrasse, Ernesto O. ; Schmidt, Tome M. Prediction of Two-Dimensional Topological Crystalline Insulator in PbSe Monolayer. Nano Letters v. 14, p. 140908135357006, 2014.

  14. Anversa, Jonas ; Piquini, Paulo ; Fazzio, Adalberto ; Schmidt, Tome M. First-principles study of HgTe/CdTe heterostructures under perturbations preserving time-reversal symmetry. Physical Review. B, Condensed Matter and Materials Physic v. 90, p. 195311, 2014.

  15. Seixas, L. ; Abdalla, L. B. ; Schmidt, T. M. ; Fazzio, A. ; Miwa, R. H. Topological states ruled by stacking faults in Bi[sub 2]Se[sub 3] and Bi[sub 2]Te[sub 3]. Journal of Applied Physics v. 113, p. 023705, 2013.

  16. Wrasse, E. O. ; Baierle, R. J. ; Fazzio, A. ; Schmidt, T. M. First-principles study of group III impurity doped PbSe: Bulk and nanowire. Physical Review. B, Condensed Matter and Materials Physics v. 87, p. 085428, 2013.

  17. Scopel, W. L. ; Fazzio, A. ; Miwa, R. H. ; Schmidt, T. M.  Graphene on amorphous HfO_{2} surface: An ab initio investigation. Physical Review. B, Condensed Matter and Materials Physics v. 87, p. 165307, 2013.

  18. Abdalla, L. B. ; Seixas, L. ; Schmidt, T. M. ; Miwa, R. H. ; Fazzio, A. . Topological insulator Bi_{2}Se_{3}(111) surface doped with transition metals: An ab initio investigation. Physical Review. B, Condensed Matter and Materials Physics v. 88, p. 045312, 2013.

  19. Schmidt, Tome M.; Miwa, R H ; Fazzio, A . Carrier-mediated magnetism in transition metal doped Bi Se topological insulator. Journal of Physics. Condensed Matter v. 25, p. 445003, 2013.

  20. Fernandes, Marcelo ; Schmidt, Tome M. Magnetism of Co doped graphitic ZnO layers adsorbed on Si and Ag surfaces. Journal of Applied Physics v. 114, p. 124311, 2013.

  21. Galicka, Marta ; Buczko, Ryszard ; Kacman, Perla ; Lima, Erika N. ; Schmidt, Tome M. ; SHTRIKMAN, HADAS . First principles studies of structural, electrical and magnetic properties of semiconductor nanowires. Physica Status Solidi. Rapid Research Letters v. 7, p. n/a-n/a, 2013.

  22. Miwa, R. H. ; Schmidt, Tome M. ; Fazzio, A. . Tuning Low-Spin to High-Spin Mn Pairs in 2D ZnO by Injecting Holes. IEEE Transactions on Nanotechnology, v. 11, p. 71-76, 2012.

  23. Lima, Erika ; Schmidt, Tome M. Confinement-dependent ferromagnetism in Mn-doped InAs quantum dots embedded in InP nanowires. Physical Review. B, v. 86, p. 125445, 2012.

  24. dos Santos, Cláudia L ; Piquini, Paulo ; Schmidt, Tome M. On the p-type character of Cd-and Zn-doped InAs nanowires. Nanotechnology (Bristol. Print), v. 22, p. 265203, 2011.

  25. Miwa, R. H. ; Schmidt, Tome M. ; Fazzio, A. . Piezomagnetic behavior of Co-doped ZnO nanoribbons. Physical Review. B, v. 84, p. 155309, 2011.

  26. Miwa, R. H. ; Schmidt, Tome M. ; Scopel, W. L. ; Fazzio, A. . Doping of graphene adsorbed on the a-SiO2 surface. Applied Physics Letters, v. 99, p. 163108, 2011.

  27. Schmidt, Tome M. ; Miwa, R. ; Fazzio, A. . Spin texture and magnetic anisotropy of Co impurities in Bi_{2}Se_{3} topological insulators. Physical Review. B,  v. 84, p. 245418, 2011.

  28. Wrasse, E. ; Baierle, R. ; Fazzio, A. ; Schmidt, Tome M. Quantum confinement and spin-orbit interactions in PbSe and PbTe nanowires: First-principles calculation. Physical Review. B, v. 84, p. 245324, 2011.

  29. dos Santos, Claudia L. ; Piquini, Paulo ; Lima, Erika N. ; Schmidt, Tome M. Low hole effective mass in thin InAs nanowires. Applied Physics Letters, v. 96, p. 043111, 2010.

  30. Schmidt, T. M. ; Miwa, R. H. ; Fazzio, A. . Ferromagnetic coupling in a Co-doped graphenelike ZnO sheet. Physical Review. B,  v. 81, p. 195413, 2010.

  31. Santos, Charley B. E. ; Schmidt, Tome M. Direct band gap GaP nanowires predicted through first principles. Journal of Applied Physics, v. 108, p. 103715, 2010.

  32. Schmidt, T. M. ; Miwa, R. H. . Ab initio study of energetic stability and electronic confinement for different structural phases of ZnO nanowires. Nanotechnology (Bristol), v. 20, p. 215202/1-215202/7, 2009.

  33. Schmidt, T. M. ; Santos, A. B. ; Silva, D. H. S. ; V. S. Bolzani ; L. A. Santos ; O. Baffa . Antioxidant properties of plant extracts: an EPR and DFT comparative study of the reaction with DPPH, TEMPOL and spin trap DMPO. Journal of the Brazilian Chemical Society , v. 20, p. 1483-1492, 2009.

  34. J. Rossato ; Baierle, R. J. ; Fazzio, A. ; Schmidt, Tome M. First-principles study of the adsorption of atomic and molecular hydrogen on BC_{2}N nanotubes. Physical Review. B, v. 77, p. 035129, 2008.

  35. Schmidt, T. M. Surface effects on the energetic and spintronic properties of InP nanowires diluted with Mn: First-principles calculations. Physical Review. B,  v. 77, p. 085325, 2008.

  36. Lima, C. P. ; Miwa, R. H. ; Schmidt, Tome M. Structural conformations and electronic properties of biphenyl adsorbed on the clean and on the partially hydrogenated Si(100) surface: An ab initio calculation. Surface Science, v. 602, p. 2634-2638, 2008.

  37. Guerini, S. ; Miwa, R. H. ; Schmidt, Tome M. ; Piquini, P. . Theoretical investigation of the hBN(0001)/cBN(111) interface. Diamond and Related Materials, v. 17, p. 1963-1968, 2008.

  38. Dionízio Moreira, M; Venezuela, P ; Schmidt, T M. The effects of oxygen on the surface passivation of InP nanowires. Nanotechnology (Bristol), v. 19, p. 065203, 2008.

  39. Miwa, R. H. ; Schmidt, Tome M.; Fazzio, A. . EL2-like defects in InP nanowires: An ab initio total energy investigation. Physical Review. B, v. 75, p. 165324-1-5, 2007.

  40. Baierle, R; Schmidt, Tome M. ; Fazzio, A . Adsorption of CO and NO molecules on carbon doped boron nitride nanotubes. Solid State Communications, v. 142, p. 49-53, 2007.

  41. Schmidt, T. M.; P. Venezuela ; Arantes, J. T. ; A. Fazzio . Electronic and Magnetic Properties of Mn-doped InP Nanowires from First Principles. Physical Review. B,  v. 73, n.235330, p. 235330-1-5, 2006.

  42. Schmidt, T. M.; Arantes, J. T. ; A. Fazzio . First principles calculations of as impurities in the presence of a 90º partial dislocation in Si. Brazilian Journal of Physics , v. 36, p. 261-263, 2006.

  43. Schmidt, T. M. Hydrogen and oxygen on InP nanowire surfaces. Applied Physics Letters, v. 89, p. 123117-1-3, 2006.

  44. R. J. Baierle ; Piquini, P. ; Schmidt, Tome M.; A. Fazzio . Hydrogen Adsorption on Carbon-Doped Boron Nitride Nanotube. Journal of Physical Chemistry. B, v. 110, p. 21184-21188, 2006.

  45. Piquini, P. ; R. J. Baierle ; Schmidt, Tome M. ; A. Fazzio . Formation energy of native defects in BN nanotubes: an ab initio study. Nanotechnology (Bristol), Inglaterra, v. 16, p. 827-831, 2005.

  46. Miwa, R. H. ; Schmidt, Tome M. ; P. Venezuela . Electronic steps and band offset of Si-Ge two-dimensional superlattices on Bi/Si(111). Physical Review. B, New York, v. 72, n.125403, p. 125403-1-5, 2005.

  47. Schmidt, T. M.; Miwa, R. H. ; P. Venezuela ; A. Fazzio . Stability and Electronic Confinement of Free-standing InP Nanowires: ab initio Calculations. Physical Review. B,  New York, v. 72, n.193404, p. 193404-1-4, 2005.

  48. Schmidt, T. M.; Miwa, R. H. ; Srivastava, G. P. . STM images and energetics of the bi-covered (root3) reconstructed Si(111) surface. Brazilian Journal of Physics , São Paulo, v. 34, n.2B, p. 629-631, 2004.

  49. Arantes, J. T. ; Miwa, R. H. ; Schmidt, Tome M. Structural models and core-level shifts of the oxidationof the Si(001) surface. Physical Review. B, New York, v. 70, n.235321, p. 235321-1-7, 2004.

  50. Schmidt, T. M.; R. J. Baierle ; Piquini, P. ; A. Fazzio . Theoretical study of native defects in BN nanotubes. Physical Review. B,  v. 67, n.113407, p. 113407-1-4, 2003.

  51. Miwa, R H ; Schmidt, Tome M. ; Srivastava, G P . Bi covered Si(111) surface revisited. Journal of Physics. v. 15, p. 2441-2447, 2003.

  52. Kagimura, R. ; Chacham, H. ; Schmidt, Tome M. ; Miwa, R. H. . Localization of intrinsic defects in CaF2-BaF2 superlattices. Applied Physics Letters, v. 83, n.20, p. 4154-4156, 2003.

  53. Miwa, R ; Schmidt, Tome M.; Srivastava, G P . Ab initio study of the self-organised Bi-lines on the Si(0 0 1) surface. Surface Science, v. 507-510, p. 368-373, 2002.

  54. Schmidt, T. M.; Miwa, R. H. ; Orellana, W. ; Chacham, H. . Stacking fault effects in Mg-doped GaN. Physical Review. B,  v. 65, n.033205, p. 033205-1-5, 2002.

  55. Schmidt, T. M.; Miwa, R. H. ; Fazzio, A. ; MOTA, R. . Ab initio calculations on the compensation mechanisms in InP. Solid State Communications, v. 117, p. 353-355, 2001.

  56. Schmidt, T. M.; JUSTO, J. F. ; A. Fazzio . Stacking fault effect in pure and n-type doped GaAs. Applied Physics Letters, v. 12, p. 907-909, 2001.

  57. Schmidt, T. M.; Castineira, J.L.P. ; Miwa, R.H. . Si(001)/In-4×3 surface: a first principles total energy calculation. Surface Science, v. 482-485, p. 1468-1473, 2001.

  58. Schmidt, T. M.; CASTINEIRA, J. L. P. ; Miwa, R. H. . Solving the structural model for the Si(001)-In(4x3) surface. Applied Physics Letters, v. 79, p. 203-206, 2001.

  59. Justo, J ; Schmidt, Tome M. ; Antonelli, A. . Segregation of dopant atoms on extended defects in semiconductors. Physica. B, v. 302-303, p. 403-407, 2001.

  60. Rivas-Silva, J. F. ; Durand-Niconoff, S. ; Schmidt, Tome M. ; Berrondo, M. . Theoretical explanation of the quenching of luminescence in cerium-doped ytterbium oxyorthosilicate. International Journal of Quantum Chemistry, v. 79, p. 198-203, 2000.

  61. Schmidt, T. M.; Justo, J F ; Fazzio, A . The effect of a stacking fault on the electronic properties of dopants in gallium arsenide. Journal of Physics.  v. 12, p. 10235-10239, 2000.

  62. Miwa, R. H. ; Schmidt, Tome M. DX centers in GaAs/Si- /AlAs heterostructure. Applied Physics Letters, v. 74, p. 1999, 1999.

  63. Schmidt, T. M.; Miwa, R. ; Fazzio, A. ; MOTA, R. . [PIn](n) antisite clustering in InP. Physical Review. B,  v. 60, p. 16475-16478, 1999.

  64. Justo, J.F ; Antonelli, A ; Schmidt, Tome M. ; Fazzio, A . Effects of extended defects on the properties of intrinsic and extrinsic point defects in silicon. Physica. B, v. 273-274, p. 473-475, 1999.

  65. Schmidt, T. M.; Miwa, R.H ; Fazzio, A ; Mota, R . Intrinsic doping in InP: ab initio calculations of PIn antisites. Physica. B,  v. 273-274, p. 831-834, 1999.

  66. MOTA, R. ; Piquini, P. ; Schmidt, Tome M. ; Fazzio, A. . Electronic and structural properties of defects in c-BN. International Journal of Quantum Chemistry, v. 65, p. 941-946, 1997.

  67. Piquini, P. ; Schmidt, Tome M. ; MOTA, R. ; Fazzio, A. . Theoretical studies of native defects in cubic boron nitride. Physical Review. B, v. 56, p. 3556-3559, 1997.

  68. Schmidt, T. M.; Fazzio, A. ; Caldas, M. . Germanium negative-U center in GaAs. Physical Review. B,  v. 53, p. 1315-1321, 1996.

  69. Schmidt, T. M.; Fazzio, A. . Metastability in Periodically delta-doped GaAs. Brazilian Journal of Physics , v. 26, p. 392-394, 1996.

  70. Schmidt, T. M.; Fazzio, A. . Ab initio calculation of electronic properties of periodically Si- -doped GaAs. Physical Review. B,  v. 51, p. 7898-7900, 1995.

  71. Schmidt, T. M.; Venezuela, P. P. M. ; Caldas, M. J. ; Fazzio, A. . Carbon doping of GaAs: Compensation effects. Applied Physics Letters, v. 66, p. 2715, 1995.

  72. Fazzio, A. ; Schmidt, Tome M. Electronic Structure of Periodically Si-delta-doped GaAs. International Journal of Quantum Chemistry, v. 29, p. 203-206, 1995.

  73. Fazzio, A. ; Schmidt, Tome M. Metastability and Electronic Structure of Periodically n-type and p-type delta doped layer in GaAs. Materials Science Forum, v. 196, n.-201, p. 421-424, 1995.

  74. Schmidt, T. M.; Fazzio, A. ; Caldas, M. J. . Trends in the Metastability of DX-Centers. Materials Science Forum, v. 196, n.201, p. 273-278, 1995.

  75. Schmidt, T. M.; Lino, A. T. ; Takahashi, E. K. . Si-delta-doping Quantum Wells in GaAs/GaAlAs Heterosctructures under in-plane Magnetic Fields. Ciência & Engenharia (UFU), v. 4, p. 35-45, 1995.

  76. Schmidt, T. M.; Venezuela, P. P. M. ; Fazzio, A. . Theoretical Calculation of Anion-antisite-like Defects in GaP. Materials Science Forum, v. 143, p. 991-994, 1994.

  77. Schmidt, T. M.; Fazzio, A . Many-electron effects on the structural properties of sp impurities in semiconductors. Solid State Communications, v. 82, p. 83-87, 1992.

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